JP EN

Focused ion beam / scanning electron microscope processing observation device

Model
JIB-4600F,JED-2300
Manufacturer
JEOL Ltd.
Specification
Ga ion beam, secondary electron image resolution: 1.2 nm (accelerating voltage 30 kV).
Location
Katsura Campus, Building A2 Basement 1st floor, Room 006(Incubation Core Lab)
Installation Year
2023
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Overview

It allows for high-resolution SEM observation after high-speed cross-section processing using FIB (Focused Ion Beam). Additionally, it is capable of elemental mapping using an Energy-Dispersive X-ray Spectroscopy (EDS) system. (Optional: Sample pick-up system)

Responsible department

Material Chemistry Department

Available Users

(1) Individuals who belong to the Management Program in the Graduate School of Engineering (referred to as “the graduate school”) at Kyoto University.
(2) Faculty or students of the graduate school mentioned in the previous item who belong to departments or programs other than the Management Program.
(3) Faculty or students of Kyoto University who do not belong to the graduate school mentioned in the previous item.
(4) Individuals affiliated with national or local government bodies, national university corporations or university joint-use institutions, independent administrative institutions, or corporations or organizations engaged in educational or research activities.
(5) Individuals engaged in research and development activities in companies or other organizations.
(6) Other individuals deemed appropriate by the responsible manager.

Notes

Before submitting a usage request, please make sure to inform the following contact information about the outline of your intended use and obtain approval.

Usage rules
Inquiries

Material Chemistry Department
Masahiro Shimizu
075-383-2463
shimizu.masahiro.3m*kyoto-u.ac.jp
http://func.mc.kyoto-u.ac.jp/
※Please make sure to inform us of an overview of the usage before submitting the application and obtain approval.
※Please change 「*」 to 「@」 and send.

Application for use
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