JPEN

Focused ion beam processing and observation device (FIB (FB-2200))

Hitachi High-Tech GLOBAL
  • High-speed and large-area processing at the several 100µm level are possible using a high-current ion beam.
  • Low-damage sample preparation is possible using a low-acceleration ion beam (minimum acceleration voltage 2kV)
  • This is equipped with a micro-pickup system that enables pinpoint preparation of thin film samples.
  • Extraction, fixation, and thinning of micro samples at the 10 µm level are all possible within the FIB device.
Installation Location
56 Installation Location 57 North Building 2 (partially located in the DuET experiment building in North Building 1)
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User Guide

Kyoto University
Use -by-the-hour

Accepted only between 9 am and 5 pm off campus

Other Research Institutes
Use -by-the-hour

Accepted only between 9 am and 5 pm off campus

Companies, etc.
Public offering
Use -by-the-hour
Users perform measurements on an hourly basis
public offering
Users perform the measurements on an hourly basis
User Guide
Person of Kyoto University:Please contact the person in charge.
Others:Project Zero Emission Energy Research Please contact the person in charge.
(Paid use and use under a joint research agreement are available.)
※For details on how to apply, please refer to the device's website.
http://www.iae.kyoto-u.ac.jp/zero_emission/

Inquiries
Advanced Energy Conversion Division Advanced Energy Structural Materials Research Section(Contact:Omura)
TEL
0774-38-3568
MAIL
ohmura.takamasa.2r*kyoto-u.ac.jp 

Please change 「*」 to 「@」 and send.

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